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IRF520 데이터 시트보기 (PDF) - Unspecified
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IRF520
N-Channel Power Mosfets, 11A,60-100V
Unspecified
IRF520 Datasheet PDF : 5 Pages
1
2
3
4
5
IRF120-123/IRF520-523
MTP10N08/10N10
N-Channel Power Mosfets,
11A,60-100V
Maximum Rating
Symbol Characteristic
V
DSS
V
DGR
V
GS
TJ,Tstg
TL
Drain to Source Voltage
1
Drain to Gate Voltage
1
R
GS
=20k
Ω
Gate to Source Voltage
Operating Junction and
Storage Temperature
Maximum Lead Temperature
for Soldering Purposes,
1/8” From Case for 5s
Maximum Thermal Characteristics
R
Ө
JC
R
Ө
JA
P
D
I
DM
Thermal Reistance
Junction to Case
Thermal Resistance,
Junction to Ambient
Total Power Dissipation
at Tc=25
℃
Pulsed Drain Current
2
Rating
IRF120/122
IRF520/522
MTP10N10
100
100
±20
-55 to +150
275
Rating
MTP10N08
80
80
±20
-55 to +150
275
IRF120-123/IRF520-523
3.12
30/80
40
20
Rating
IRF122/123
IRF522/523
60
60
±20
-55 to +150
275
MTP10N08/10
1.67
80
75
32
Unit
V
V
V
℃
℃
℃
/W
℃
/W
W
A
Electrical Characteristics
(Tc=25
℃
unless otherwise noted)
Symbol
Characteristic
Min
Off Characteristics
V
(BR)DSS
Drain Source Breakdown Voltage1 100
IRF120/122/520/522/
MTP10N10
MTP10N08
80
IRF121/123/521/523
60
I
DSS
Zero Gate Voltage Drain Current
I
GSS
Gate-Body Leakage Current
IRF120-123
IRF520-523/MTP10N08/10
Max
250
1000
±100
±500
Unit
V
Test Conditionss
V
GS
=0V, I
D
=250µA
µA
V
DS
=Rated V
DSS
,V
GS
=0V
µA
V
DS
=0.8x Rated V
DSS
,
V
GS
=0V, Tc=125
℃
nA
V
GS
=±20V,V
DS
=0V
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