CYStech Electronics Corp.
Spec. No. : C655N3
Issued Date : 2017.11.27
Revised Date :
Page No. : 4/7
Typical Characteristics(Cont.)
10000
Built-in Diode Characteristics
Capacitance vs Reverse-Biased Voltage
100
1000
100
1
-40°C
0°C
25°C
85°C
140°C
10
100
1000
-IF, Forward Current(mA)
10000
Power Derating Curves
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0 25 50 75 100 125 150 175 200
TA, Ambient Temperature(℃)
Cib
Cob
10
0.1
1
10
100
VR, Reverse-Biased Voltage(V)
Power Derating Curve
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175 200
TC, Case Temeprature(℃)
BTB1580SN3
CYStek Product Specification