Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
부품명
상세내역
NE27200 데이터 시트보기 (PDF) - NEC => Renesas Technology
부품명
상세내역
제조사
NE27200
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NEC => Renesas Technology
NE27200 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
CHIP DIMENSIONS
(Unit:
µ
m)
NE32500, NE27200
5.5
13
58 36.5 66
25
Drain
Source
Source
Gate
25
66
13
49.5 43
350
Thickness = 140
µ
m
: BONDING AREA
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
250
100
200
80
150
60
100
40
50
20
0
50
100
150
200
250
0
T
A
– Ambient Temperature – ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 0 V
–0.2 V
–0.4 V
1.5
V
DS
– Drain to Source Voltage – V
–0.6 V
–0.8 V
3.0
2
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]