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RMWB12001 데이터 시트보기 (PDF) - Raytheon Company
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RMWB12001
12 GHZ Buffer Amplifier MMIC
Raytheon Company
RMWB12001 Datasheet PDF : 6 Pages
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RMWB12001
12 GHZ Buffer Amplifier MMIC
Figure 3
Recommended
Application Schematic
Circuit Diagram
Drain Supply
V
d
=4 V
Bond Wires
100 pF
10,000 pF
Output Power
Detector Voltage V
det
3 k
Ω
100 pF
PRODUCT INFORMATION
100 pF
Bond Wires
MMIC Chip
RF IN
RF OUT
Figure 4
Application Information
Recommended
Assembly Diagram
Bond Wires
100 pF
10,000 pF
Ground
(Back of Chip)
Note:
Gate Supply V
g
Detector delivers > 0.1 V DC into 3 k
Ω
load resistor for > +20 dBm output power. If output power level detection is not desired, do not connect to
detector bond pad.
Die-Attach
80Au/20Sn
10,000pF
Drain Supply
Vd= 4 V
3k
Ω
Output Power
Detector Voltage
V
det
5mil Thick
Alumina
50-Ohm
100pF
100pF
100pF
RF
Input
5 mil Thick
Alumina
50-Ohm
www.raytheon.com/micro
2 mil Gap
RF
Output
100pF
L< 0.015”
(4 Places)
Gate Supply Vg
10,000pF
Note:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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