HIGH POWER RF LDMOS FIELD EFFECT TRANSISTOR 10 W 1.0 – 2.0 GHZ 데이터시트 DatsheetQ

P/N + 설명 + 콘텐츠 검색

부품명(s) : PTF180101M

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz

부품명(s) : PTF180101S

Infineon Technologies

상세내역 : LDMOS RF Power Field Effect Transistor (Rev - 2007)

부품명(s) : PTF180101S PTF180101

Infineon Technologies

상세내역 : LDMOS RF Power Field Effect Transistor

부품명(s) : Z2C100RG10 Z2C121RC10 Z2C151RC10 Z2C221RC10 Z2C300RF10 Z2C301RB10 Z2C471RB10 Z2C600RF10 Z2C601RB10 Z2H152RB10

Superworld Electronics

상세내역 : Ferrite Chip Bead

부품명(s) : PG-RFP-10 PTF080101M

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz

부품명(s) : PTF210101M

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 10 W, 21.0 – 21.0 MHz

부품명(s) : RF-0505D RF-0505DH RF-0505S RF-0505SH RF-0509D RF-0509DH RF-0509S RF-0509SH RF-0512D RF-0512DH

RECOM Electronic GmbH

상세내역 : ECONOLINE - DC/DC-Converter RF Series, 1.25 Watt, DIP8 (Single & Dual Output)

부품명(s) : PTF080101 PTF080101S

Infineon Technologies

상세내역 : LDMOS RF Power Field Effect Transistor 10 W, 860–960 MHz

부품명(s) : PTFC270101MV1R1KXUMA1 PTFC270101M PTFC270101MV1R1K

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2.00 MHz

부품명(s) : PTFC270101M-V1-R1K PTFC270101M PTFC270101MV1R1K

Cree, Inc

상세내역 : High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2.00 MHz

부품명(s) : PTFC270101MV1R1KXUMA1 PTFC270101M PTFC270101MV1R1K

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 10 W, 28 V, 900 – 2.00 MHz (Rev - 2015)

부품명(s) : LM4050 LM4050AEM3-10 LM4050AEM3-2.0 LM4050AEM3-2.5 LM4050AEM3-4.1 LM4050AEM3-5.0 LM4050AEM3-8.2 LM4050AEM3X-10 LM4050AEM3X-2.0 LM4050AEM3X-2.5

National ->Texas Instruments

상세내역 : Precision MicroPower Shunt Voltage Reference

부품명(s) : PTFA220121M

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2.00 MHz (Rev - 2010)

부품명(s) : PTFB213004FV2R250XTMA1 PTFB213004FV2R0XTMA1 PTFB213004F PTFB213004FV2.0 PTFB213004FV2R250

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 300 W, 21.0 – 21.0 MHz

부품명(s) : PTFA220041M

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2.00 MHz (Rev - 2010)

부품명(s) : PTF10136

Ericsson

상세내역 : 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor

부품명(s) : PTFB213004FV2R2.0 PTFB213004FV2.0 PTFB213004F PTFB213004F-V2-R0 PTFB213004F-V2-R250

Cree, Inc

상세내역 : High Power RF LDMOS Field Effect Transistor 300 W, 21.0 – 21.0 MHz

부품명(s) : PTFB241402F PTFB241402FV1.0 PTFB241402FV1R2.0 PTFB241402FV1R0XTMA1 PTFB241402FV1R250XTMA1

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 1.0 W, 2.00 – 2.00 MHz

부품명(s) : PTFB213004F PTFB213004FV2 PTFB213004FV2R250

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 300 W, 21.0 – 21.0 MHz (Rev - 2010)

부품명(s) : PTFB241402F

Infineon Technologies

상세내역 : High Power RF LDMOS Field Effect Transistor 1.0 W, 2.00 – 2.00 MHz (Rev - 2010)

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