P/N + 설명 + 콘텐츠 검색
부품명(s) : IRG4BC30W-S IRG4BC30WS
International Rectifier
상세내역 : Insulated gate bipolar transistor. VCES = 600V, VCE(on)typ. = 2.10V @ VGE = 15V, IC = 12A
부품명(s) : IRGBC20KD2-S IRGBC20MD2-S
International Rectifier
상세내역 : Short Circuit Rated UltraFast IGBT VCES= 600V VCE(on) typ. =2.27V @VGE= 15V, IC= 9.0A
부품명(s) : GA200SA60S GA200SA60SP
Vishay Semiconductors
상세내역 : Insulated gate bipolar transistor.Ultralow VCE(on), 342 A
부품명(s) : VS-GA250SA60S GA250SA60S
Vishay Semiconductors
상세내역 : Insulated gate bipolar transistor.Ultralow VCE(on), 250 A (Rev - 2016)
부품명(s) : VS-GA250SA60S GA250SA60S
Vishay Semiconductors
상세내역 : Insulated gate bipolar transistor.Ultralow VCE(on), 250 A
부품명(s) : HMG60N60A HMG60N60T
Unspecified
상세내역 : 600V Insulated gate bipolar Transistor
International Rectifier
상세내역 : Insulated gate bipolar TRANSISTOR
부품명(s) : IRGBC40M-S
International Rectifier
상세내역 : Insulated gate bipolar TRANSISTOR
부품명(s) : IRG4BC30F IRG4BC30
International Rectifier
상세내역 : Insulated gate bipolar TRANSISTOR
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