BC549B,C BC550B,C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
ON CHARACTERISTICS
DC Current Gain
(IC = 10 µAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
BC549B/550B
BC549C/550C
BC549B/550B
BC549C/550C
hFE
100
150
—
100
270
—
200
290
450
420
500
800
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see note 1)
(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)
Base–Emitter Saturation Voltage
(IC = 100 mAdc, IB = 5.0 mAdc)
Base–Emitter On Voltage
(IC = 10 µAdc, VCE = 5.0 Vdc)
(IC = 100 µAdc, VCE = 5.0 Vdc)
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
VCE(sat)
—
—
—
VBE(sat)
—
0.075
0.25
0.3
0.6
0.25
0.6
1.1
—
VBE(on)
—
0.52
—
—
0.55
—
0.55
0.62
0.7
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small–Signal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
BC549B/BC550B
BC549C/BC550C
fT
—
250
—
Ccbo
—
2.5
—
hfe
240
330
500
450
600
900
Noise Figure
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)
(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)
NOTES:
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
2. Pulse test = 300 µs – Duty cycle = 2%.
NF1
—
0.6
2.5
NF2
—
—
10
Unit
—
Vdc
Vdc
Vdc
MHz
pF
—
dB
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data