BC856S 데이터 시트보기 (PDF) - Philips Electronics
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BC856S Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose double transistor
Product specification
BC856S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SC-88 (SOT363) standard mounting conditions.
CONDITIONS
note 1
VALUE
416
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
Cc
fT
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation
voltage
collector capacitance
transition frequency
CONDITIONS
MIN.
IE = 0; VCB = −30 V
−
IE = 0; VCB = −30 V; Tj = 150 °C −
IC = 0; VEB = −5 V
−
IC = −2 mA; VCE = −5 V
110
IC = −10 mA; IB = −0.5 mA
−
IC = −100 mA; IB = −5 mA; note 1 −
IC = −10 mA; IB = −0.5 mA
−
IE = ie = 0; VCB = −10 V; f = 1 MHz −
IC = −10 mA; VCE = −5 V;
100
f = 100 MHz
TYP.
−
−
−
−
−
−
700
−
−
MAX.
−15
−5
−100
−
−100
−300
−
2.5
−
UNIT
nA
µA
nA
mV
mV
mV
pF
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1999 Aug 24
3
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