HI5800(1999) 데이터 시트보기 (PDF) - Intersil
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HI5800 Datasheet PDF : 15 Pages
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HI5800
Die Characteristics
DIE DIMENSIONS:
202 mils x 283 mils x 19 mils
METALLIZATION:
Metal 1: Type: AlSiCu, Thickness: 6kÅ +1500A/-750Å
Metal 2: Type: AlSiCu, Thickness: 16kÅ +2500A/-1100Å
PASSIVATION:
Type: Sandwich Passivation - Nitride +
Undoped Si Glass (USG)
Thickness: Nitride - 4KÅ, USG - 8KÅ, Total - 12kÅ ±2kÅ
TRANSISTOR COUNT:
10K
SUBSTRATE POTENTIAL (POWERED UP):
VEE
Metallization Mask Layout
HI5800
VIN
AGND
AGND
ADJ+
ADJ-
AVEE
AVEE
AVCC
AVCC
AGND
AVEE
AVEE
A0
CS
D9
D8
DVCC
DGND
AGND
VEE
D7
D6
D5
D4
14
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