TC649VUATR 데이터 시트보기 (PDF) - Microchip Technology
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TC649VUATR Datasheet PDF : 28 Pages
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Table 5-2 gives examples of some commonly available
transistors and MOSFETs. This table should be used
as a guide only since there are many transistors and
MOSFETs which will work just as well as those listed.
The critical issues when choosing a device to use as
Q1 are: (1) the breakdown voltage (V(BR)CEO or VDS
(MOSFET)) must be large enough to withstand the
highest voltage applied to the fan (Note: This will occur
when the fan is off); (2) 5 mA of base drive current must
VDD
TC649
be enough to saturate the transistor when conducting
the full fan current (transistor must have sufficient
gain); (3) the VOUT voltage must be high enough to suf-
ficiently drive the gate of the MOSFET to minimize the
RDS(on) of the device; (4) rated fan current draw must
be within the transistor's/MOSFET's current handling
capability; and (5) power dissipation must be kept
within the limits of the chosen device.
VDD
VDD
Fan
Fan
Fan
VOUT
RBASE
RBASE
Q1
VOUT
RSENSE
Q1
Q2
VOUT
RSENSE
Q1
RSENSE
GND
a) Single Bipolar Transistor
GND
b) Darlington Transistor Pair
FIGURE 5-6:
Output Drive Transistor Circuit Topologies.
GND
C) N-Channel MOSFET
TABLE 5-2:
Device
TRANSISTORS AND MOSFETS FOR Q1 (VDD = 5V)
Package
Max. VBE(sat)/VGS
(V)
Min. HFE
VCEO/VDS
(V)
Fan Current
(mA)
Suggested
RBASE (Ω)
MMBT2222A
SOT-23
1.2
50
40
150
800
MPS2222A
TO-92
1.2
50
40
150
800
MPS6602
TO-92
1.2
50
40
500
301
SI2302
SOT-23
2.5
NA
20
500
Note 1
MGSF1N02E
SOT-23
2.5
NA
20
500
Note 1
SI4410
SO-8
4.5
NA
30
1000
Note 1
SI2308
SOT-23
4.5
NA
60
500
Note 1
Note 1: A series gate resistor may be used in order to control the MOSFET turn-on and turn-off times.
2002 Microchip Technology Inc.
DS21449C-page 13
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