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HCTS20D 데이터 시트보기 (PDF) - Intersil
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HCTS20D
Radiation Hardened Dual 4-Input NAND Gate
Intersil
HCTS20D Datasheet PDF : 8 Pages
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Die Characteristics
DIE DIMENSIONS:
2.20 x 2.24(mm)
METALLIZATION:
Type: SiAl
Metal Thickness: 11k
Å
±
1k
Å
GLASSIVATION:
Type: SiO
2
Thickness: 13k
Å
±
2.6k
Å
WORST CASE CURRENT DENSITY:
<2.0 x 10
5
A/cm
2
BOND PAD SIZE:
100
µ
m x 100
µ
m
4 mils x 4 mils
Metallization Mask Layout
HCTS20MS
HCTS20MS
A1
VCC
D2
(1)
(14)
(13)
B1 (2)
NC (3)
(12) C2
(11) NC
C1 (4)
(10) B2
D1 (5)
(9) A2
(6)
(7)
(8)
Y1
GND
Y2
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location.
The mask series for the HCTS20 is TA14426A.
Spec Number
518619
427
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