SAA6588 데이터 시트보기 (PDF) - Philips Electronics

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SAA6588

RDS/RBDS pre-processor

Philips Electronics 

Philips Semiconductors

RDS/RBDS pre-processor

Product specification

SAA6588

CHARACTERISTICS DIGITAL PART

VDDA = VDDD = 5 V; Tamb = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

Supply

VDDD

IDDD

Ptot

Inputs

VIL1

VIL2

VIH1

VIH2

ILI

Ii(pu)

Outputs

VOL1

VOL2

VOH

digital supply voltage

digital supply current

total power dissipation

LOW-level input voltage at

pins TCON, OSCI and MAD

LOW-level input voltage at

pins SCL and SDA

HIGH-level input voltage at

pins TCON, OSCI and MAD

HIGH-level input voltage at

pins SCL and SDA

input leakage current at

pins TCON, SCL and SDA

input pull-up current at pin MAD

VDDD = 4.5 to 5.0 V

VDDD = 5.0 to 5.5 V

VDDD = 4.5 to 5.5 V

VMAD = 0 to VDDD

VMAD = VIL1

VMAD = 3.5 V

LOW-level output voltage at

pins DAVN, PSWN and OSCO

LOW-level output voltage at

pin SDA

HIGH-level output voltage at

pins DAVN, PSWN and OSCO

IOL = 2 mA

IOL1 = 4.0 mA

IOL2 = 6.0 mA

IOH = −2 mA

Crystal parameters

fi(xtal)

crystal input frequency

n=1

n=2

n=3

n=4

∆fosc

adjustment tolerance of oscillator

frequency

∆fosc(T)

temperature drift of oscillator

frequency

Tamb = −40 to +85 °C

CL

load capacitance

Rxtal

crystal resonance resistance

fosc ≤ 12.996 MHz

fosc = 17.328 MHz

MIN. TYP.

MAX.

UNIT

4.5

5.0

−

6.0

−

70

−

−

−0.5

−

−0.5

−

0.7VDDD −

3.0

−

−

−

−30

−20

−

−20

−

−

−

−

−

−

4.0

−

5.5

V

−

mA

−

mW

0.3VDDD V

+1.5

V

+0.3VDDD V

−

V

VDDD + 0.5 V

10

µA

−

µA

−10

µA

0.4

V

0.4

V

0.6

V

−

V

−

4.332 −

−

8.664 −

−

12.996 −

−

17.328 −

−

−

30

MHz

MHz

MHz

MHz

ppm

−

−

30

ppm

−

30

−

pF

−

−

120

Ω

−

−

60

Ω

1997 Sep 01

16

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