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DS12887 데이터 시트보기 (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS12887
Dallas
Dallas Semiconductor -> Maxim Integrated Dallas
DS12887 Datasheet PDF : 19 Pages
First Prev 11 12 13 14 15 16 17 18 19
POWER-DOWN/POWER-UP TIMING
DS12887
POWER-DOWN/POWER-UP TIMING
PARAMETER
SYMBOL MIN TYP
CS at VIH before Power-Down
VCC Slew from 4.5V to 0V ( CS at VIH)
VCC Slew from 0V to 4.5V ( CS at VIH)
CS at VIH after Power-Up
tP D
0
tF
300
tR
100
tREC
20
PARAMETER
Expected Data Retention
SYMBOL MIN TYP
tDR
10
MAX
200
MAX
UNITS
µs
µs
µs
ms
NOTES
(tA = 25°C)
UNITS NOTES
years
NOTE:
The real time clock will keep time to an accuracy of ±1 minute per month during data retention time for
the period of tDR.
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
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