BSM 100 GB 120 DN2
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C
200
A
17V
IC 160
15V
13V
11V
140
9V
7V
120
100
80
60
40
20
0
0
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V
200
A
IC 160
140
120
100
80
60
40
20
0
0
2
4
6
8 10 V 14
VGE
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 µs, Tj = 125 °C
200
A
17V
IC
160
15V
13V
11V
140
9V
7V
120
100
80
60
40
20
0
0
1
2
3
V
5
VCE
Semiconductor Group
5
Mar-29-1996