IS62V6416BLL-12K 데이터 시트보기 (PDF) - Integrated Silicon Solution
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IS62V6416BLL-12K Datasheet PDF : 11 Pages
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IS62V6416BLL
64K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
ISSI®
MARCH 2000
FEATURES
• Access time: 100 and 120 ns
• CMOS low power operation
• TTL compatible interface levels
• Single 2.7V-3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in Jedec Std 44-pin SOJ package,
44-pin TSOP (Type II), and 48-pin mini BGA
DESCRIPTION
The ISSI IS62V6416BLL is an ultra-low power, 1,048,576-bit
static RAM organized as 65,536 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques yields access times as fast as 100 ns with
low power consumption.
When CS is HIGH (deselected) or when CS is LOW and both
LB and UB are HIGH, the device assumes a standby mode at
which the power dissipation can be reduced down with CMOS
input levels.
Easy memory expansion is provided by using Chip Select and
Output Enable inputs, CS and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
FUNCTIONAL BLOCK DIAGRAM
A0-A15
DECODER
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CS
OE
WE
CONTROL
CIRCUIT
UB
LB
64K x 16
MEMORY ARRAY
COLUMN I/O
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. A
03/17/00
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