IS62V6416BLL-12K 데이터 시트보기 (PDF) - Integrated Silicon Solution

부품명

상세내역

제조사

IS62V6416BLL-12K

64K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

IS62V6416BLL

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

VTERM Terminal Voltage with Respect to GND –0.5 to Vcc +0.5 V

TSTG Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.5

W

IOUT DC Output Current (LOW)

20

mA

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating only and functional operation of the device at these or

any other conditions above those indicated in the operational sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

ISSI ®

OPERATING RANGE

Range

Commercial

Industrial

Ambient Temperature

0°C to +70°C

–40°C to +85°C

VCC

2.7V (Min.) to 3.3V (Max.)

2.7V (Min.) to 3.3V (Max.)

DC ELECTRICAL CHARACTERISTICS (Over Operating Range Unless Otherwise Specified)

Symbol Parameter

Test Conditions

VOH

Output HIGH Voltage

VCC = Min., IOH = –1 mA

VOL

Output LOW Voltage

VCC = Min., IOL = 2.1 mA

VIH

Input HIGH Voltage

VIL(1)

Input LOW Voltage

ILI

Input Leakage

GND ≤ VIN ≤ VCC

ILO

Output Leakage

GND ≤ VOUT ≤ VCC, Outputs Disabled

Note:

1. VIL (min.) = –1.5V for pulse width less than 30 ns.

Min.

2.2

—

2.0

–0.2

–1

–1

Max.

—

0.4

VCC + 0.3

0.4

1

1

Unit

V

V

V

V

µA

µA

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

03/17/00

Share Link: