DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Unit Notes
Input Leakage Current (0 V ≤ Vin ≤ VDD)
Ilkg(I)
—
Output Leakage Current (0 V ≤ Vin ≤ VDDQ)
Ilkg(O)
—
AC Supply Current (Device Selected,
MCM63P736/818–133 IDDA
—
All Outputs Open, Freq = Max)
MCM63P736/818–100
Includes VDD and VDDQ
MCM63P736/818–66
CMOS Standby Supply Current (Device Deselected, Freq = 0,
ISB2
—
VDD = Max, VDDQ = Max, All Inputs Static at CMOS Levels)
Sleep Mode Standby Current (Device Deselected, Freq = Max,
IZZ
—
VDD = Max, VDDQ = Max, All Other Inputs Static at CMOS Levels,
ZZ ≥ VDD – 0.2 V.
TTL Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, VDDQ = Max, All Inputs Static at TTL Levels)
ISB3
—
—
±1
µA
1
—
±1
µA
—
TBD
mA 2, 3, 4
—
TBD
mA
5, 6
—
2
mA 1, 5, 6
—
TBD
mA
5, 7
Clock Running (Device Deselected,
MCM63P736/818–133 ISB4
—
Freq = Max, VDD = Max, VDDQ = Max, MCM63P736/818–100
All Inputs Toggling at CMOS Levels)
MCM63P736/818–66
—
TBD
mA
5, 6
Static Clock Running (Device Deselected, MCM63P736/818–166 ISB5
—
Freq = Max,VDD = Max, VDDQ = Max, MCM63P736/818–150
All Inputs Static at TTL Levels)
MCM63P736/818–133
—
TBD
mA
5, 6
Output Low Voltage (IOL = 2 mA) VDDQ = 2.5 V
VOL
—
—
0.7
V
Output High Voltage (IOL = – 2 mA) VDDQ = 2.5 V
VOH
1.7
—
—
V
Output Low Voltage (IOL = 8 mA) VDDQ = 3.3 V
VOL2
—
—
0.4
V
Output High Voltage (IOL = – 4 mA) VDDQ = 3.3 V
VOH2
2.4
—
—
V
NOTES:
1. LBO and ZZ pins have an internal pullup and will exhibit leakage currents of ± 5 µA.
2. Reference AC Operating Conditions and Characteristics for input and timing.
3. All addresses transition simultaneously low (LSB) then high (MSB).
4. Data states are all zero.
5. Device is deselected as defined by the Truth Table.
6. CMOS levels for I/O’s are VIT ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V.
7. TTL levels for I/O’s are VIT ≤ VIL or ≥ VIH2. TTL levels for other inputs are Vin ≤ VIL or ≥ VIH.
MCM63P736•MCM63P818
12
MOTOROLA FAST SRAM