STX117 데이터 시트보기 (PDF) - STMicroelectronics

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STX117

Complementary power Darlington transistors

STMicroelectronics 

STX112, STX117

2

Electrical characteristics

Electrical characteristics

Note:

Tcase = 25 °C; unless otherwise specified.

Table 4. Electrical characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Collector cut-off current

ICBO

(IE = 0)

VCB = 100 V

-

Collector cut-off current

ICEO

(IB = 0)

VCE = 50 V

-

Emitter cut-off current

IEBO

(IC = 0)

VEB = 5 V

-

VCEO(sus)(1)

Collector-emitter

sustaining voltage (IB = 0)

IC = 30 mA

100 -

VCE(sat)(1)

Collector-emitter saturation

voltage

IC = 2 A

IB = 8 mA

-

VBE(on) Base-emitter on voltage IC = 2 A

VCE = 4 V

-

hFE(1)

DC current gain

IC = 1 A_ _ VCE = 4 V 1000 -

IC = 2 A_

VCE = 4 V 500

-

1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %

1 mA

2 mA

2 mA

V

2.5 V

2.8 V

For PNP types voltage and current values are negative.

2.1

Typical characteristic (curves)

Figure 2. DC current gain

(VCE = 3 V NPN)

Figure 3. DC current gain

(VCE = - 3 V PNP)

Doc ID 6881 Rev 4

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