BTS949 데이터 시트보기 (PDF) - Infineon Technologies

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BTS949

mart Lowside Power Switch

Infineon Technologies 

BTS 949

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter

Symbol

Drain source voltage

VDS

Drain source voltage for short circuit protection

RCC = 0 Ω

without RCC

VDS(SC)

Continuous input current 1)

IIN

-0.2V ≤ VIN ≤ 10V

VIN < -0.2V or VIN > 10V

Operating temperature

Tj

Storage temperature

Tstg

Power dissipation

Ptot

TC = 25 °C

Unclamped single pulse inductive energy

EAS

ID(ISO) = 19 A

Electrostatic discharge voltage (Human Body Model) VESD

according to MIL STD 883D, method 3015.7 and

EOS/ESD assn. standard S5.1 - 1993

Load dump protection VLoadDump2) = VA + VS VLD

VIN=low or high; VA=13.5 V

td = 400 ms, RI = 2 Ω, ID=0,5*19A

td = 400 ms, RI = 2 Ω, ID= 19A

DIN humidity category, DIN 40 040

IEC climatic category; DIN IEC 68-1

Value

60

15

50

no limit

| IIN | ≤ 2

- 40 ... +150

- 55 ... +150

240

6000

3000

110

92

E

40/150/56

Unit

V

mA

°C

W

mJ

V

Thermal resistance

junction - case:

junction - ambient:

SMD version, device on PCB: 3)

RthJC

RthJA

RthJA

0.7

K/W

75

45

1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)

2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical

without blown air.

Semiconductor Group

Page 2

02.12.1998

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