SM2T
Figure 1: Peak pulse power versus exponential
pulse duration
PPP(W)
1.E+04
Tj initial = 25°C
1.E+03
1.E+02
1.E+01
0.01
tp(ms)
0.10
1.00
10.00
Figure 2: Relative variation of peak pulse
power versus initial junction temperature
%
110
100
90
80
70
60
50
40
30
20
10
0
0
Tj(°C)
25
50
75
100
125
150
175
Figure 3: Average power dissipation versus
ambient temperature
P(W)
3.0
2.5
TAMB = Ttab
2.0
1.5
1.0
Printed circuit board FR4, recommended pad layout
0.5
0.0
0
TAMB(°C)
25
50
75
100
125
150
Figure 4: Variation of thermal impedance
junction to ambient versus pulse duration
Zth(j-c)/Rth(j-c)
1000.0
100.0
10.0
S=0.135cm²
S=2cm²
1.0
0.1
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 5: Thermal resistance junction to
ambient versus copper surface under tab
Rth(j-a)(°C/W)
250
200
150
100
50
S(cm²)
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Figure 6: Reverse leakage current versus
junction temperature (typical values)
IR(nA)
1.E+02
VR = VRM
1.E+01
1.E+00
1.E-01
1.E-02
0
Tj(°C)
25
50
75
100
125
150
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