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THBT15011(2008) 데이터 시트보기 (PDF) - STMicroelectronics

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THBT15011
(Rev.:2008)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
THBT15011 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Application information
THBT15011, THBT20011, THBT27011
Figure 7.
Surge peak current versus overload duration
ITSM(A)
10
9
8
7
6
5
4
3
2
1
0
1E-2
1E-1
t(s)
1E+0
1E+1
F=50Hz
Tj initial=25°C
1E+2
1E+3
2
Application information
Figure 8. Device connections
TIP 1
2
GND
3
RING 4
8 TIP
7
GND
6
5 RING
1. Connect pins 2, 3, 6 and 7 to Ground to guarantee a good surge current capability for
long duration disturbances.
2. To take advantage of the" 4-point“ structure of the THBT, the TIP and RING lines have
to cross the device. In this case, the device will eliminate the overvoltages generated by
the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients.
6/10

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