KSE13001O 데이터 시트보기 (PDF) - Fairchild Semiconductor

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KSE13001O

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSE13001

Color TV Chroma Output

• Collector-Base Voltage : VCBO=400V

• Current Gain Bandwidth Product : fT=50MHz (TYP.)

1

TO-92

1. Base 2. Collector 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Ratings

400

400

7

100

600

150

-55 ~ +150

Units

V

V

V

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

hFE

VCE (sat)

fT

Cob

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

IC=100µA, IE=0

IC=5mA, IB=0

IE=100µA, IC=0

VCB=200V, IE=0

VCE=10V, IC=20mA

IC=10mA, IB=1mA

VCE=30V, IC=10mA

VCB=10V, IE=0, f=1MHz

Min.

400

400

7

40

Typ.

50

4

Max.

0.1

80

0.5

Units

V

V

V

µA

V

MHz

pF

hFE Classification

Classification

hFE

R

40 ~ 65

O

55 ~ 80

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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