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K2398 데이터 시트보기 (PDF) - Toshiba
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K2398
Silicon N Channel MOS Type (π−MOSV) Field Effect Transistor
Toshiba
K2398 Datasheet PDF : 6 Pages
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TK10A50D
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
10
μ
100
μ
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth
(ch-c)
=
2.78 °C/W
1m
10m
100m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
100
ID max (pulsed)
*
ID max (continuous)
10
1 ms
*
100
μ
s
*
1
DC operation
Tc
=
25°C
0.1
*: SINGLE NONREPETITIVE
0.01
PULSE Tc = 25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
0.001
0.1
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE V
DS
(V)
E
AS
– T
ch
300
240
180
120
60
0
25
50
75
100
125
150
CHANNEL TEMPEATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVEFORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
4.49 mH
Ε
AS
=
1
2
⋅
L
⋅
I2
⋅
⎜⎛
⎜⎝
BVDSS
BVDSS
−
VDD
⎟⎞
⎟⎠
5
2013-11-01
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