CS2N60FA9H 데이터 시트보기 (PDF) - Unspecified
부품명
상세내역
제조사
CS2N60FA9H Datasheet PDF : 10 Pages
| |||
Huajing Discrete Devices
○R
CS2N60F A9H
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
1
1.00E-05
1.00E-04
6
PULSE DURATION = 10μs
5 DUTY CYCLE = 0.5%MAX
VDS=30V
4
1.00E-03
1.00E-02
t ，Pulse Width , Seconds
1.00E-01
Figure 6 Maximun Peak Current Capability
8
6
1.00E+00
1.00E+01
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
ID=2A
ID=1A
3
2
+150℃
ID=0.5A
ID=0.25A
4
+25℃
1
-55℃
0
2
3
4
5
Vgs , Gate to Source Voltage , Volts
Figure 7 Typical Transfer Characteristics
8
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25 ℃
7
2
6
4
6
8
10
12
14
Vgs , Gate to Source Voltage , Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
2.25
2
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1A
1.75
6
1.5
VGS=20V
1.25
5
1
0.75
4
0
1
2
3
4
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
0.5
-50
Figure
0
50
100
150
Tj, Junction temperature , C
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2012
Share Link: 