HAT2167H(2003) 데이터 시트보기 (PDF) - Renesas Electronics
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HAT2167H Datasheet PDF : 10 Pages
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HAT2167H
Silicon N Channel Power MOS FET Power Switching
REJ03G0039-0400Z
Rev.4.00
Jun.04.2003
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 4.2 mΩ typ. (at VGS = 10 V)
Outline
LFPAK
5
D
5
1 234
4
G
SSS
12 3
1, 2, 3 Source
4
Gate
5
Drain
Rev.4.00, Jun.04.2003, page 1 of 10
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