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2SK3878(F,T)(2013) 데이터 시트보기 (PDF) - Toshiba
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제조사
2SK3878(F,T)
(Rev.:2013)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
Toshiba
2SK3878(F,T) Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
8
6
15
10
6
5.5
5.25
4
5
4.75
2
VGS
=
4.5 V
0
0
2
4
6
8
10
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
2SK3878
I
D
– V
DS
20
COMMON SOURCE
Tc
=
25°C
PULSE TEST
16
12
8
15
10
6
5.5
5
4
VGS
=
4.5 V
0
0
4
8
12
16
20
DRAIN
−
SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
20
COMMON SOURCE
VDS
=
20 V
PULSE TEST
16
12
25
8
100
Tc
= −
55°C
4
0
0
2
4
6
8
10
GATE
−
SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25°C
PULSE TEST
16
12
ID
=
9 A
8
4.5
4
2.3
0
0
4
8
12
16
20
GATE
−
SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪ −
I
D
100
COMMON SOURCE
VDS
=
20 V
PULSE TEST
10
Tc
= −
55°C
100
25
1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
R
DS (ON)
−
I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
VGS
=
10 V
1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
3
2013-11-01
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