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K6A65D 데이터 시트보기 (PDF) - Toshiba
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K6A65D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)
Toshiba
K6A65D Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
COMMON SOURCE
10
6.25
Tc
=
25°C
PULSE TEST
4
8
6
3
5.75
2
5.5
1
VGS
=
5 V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE V
DS
10
(V)
TK6A65D
I
D
– V
DS
10
10 8
7
COMMON SOURCE
Tc
=
25°C
PULSE TEST
8
6.75
6
6.5
6.25
4
6
2
5.5
VGS
=
5 V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
10
COMMON SOURCE
VDS
=
20 V
PULSE TEST
8
6
4
25
2
100
Tc
= −
55 °C
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
V
DS
– V
GS
10
COMMON SOURCE
Tc
=
25
℃
PULSE TEST
8
6
6
www.DataSheet.co.kr
4
2
3
ID = 1.5 A
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
100
COMMON SOURCE
VDS
=
10 V
PULSE TEST
10
Tc
= −
55 °C
25
100
1
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
VGS
=
10 V
1
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
0.1
0.1
1
10
100
DRAIN CURRENT I
D
(A)
3
2009-04-09
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