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RN2305(2014) 데이터 시트보기 (PDF) - Toshiba
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상세내역
제조사
RN2305
(Rev.:2014)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
Toshiba
RN2305 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
RN2301~RN2306
Electrical Characteristics
(Ta = 25
°
C)
Characteristic
Collector cut-off current RN2301 to 2306
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
Collector output
capacitance
Input resistor
Resistor ratio
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301 to 2306
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301 to 2304
RN2305, 2306
RN2301 to 2306
RN2301 to 2306
RN2301
RN2302
RN2303
RN2304
RN2305
RN2306
RN2301 to 2304
RN2305
RN2306
Symbol
Test
Circuit
Test Condition
I
CBO
―
V
CB
=
−
50V, I
E
= 0
I
CEO
―
V
CE
=
−
50V, I
B
= 0
―
I
EBO
―
V
EB
=
−
10V, I
C
= 0
―
―
―
V
EB
=
−
5V, I
C
= 0
―
―
―
―
h
FE
V
CE
=
−
5V, I
C
=
−
10mA
―
―
―
V
CE (sat)
―
I
C
=
−
5mA, I
B
=
−
0.25mA
V
I (ON)
V
I (OFF)
f
T
C
ob
R1
R1/R2
―
―
―
V
CE
=
−
0.2V, I
C
=
−
5mA
―
―
―
―
V
CE
=
−
5V, I
C
=
−
0.1mA
―
―
V
CE
=
−
10V, I
C
=
−
5mA
―
V
CB
=
−
10V, I
E
= 0
f = 1MHz
―
―
―
―
―
―
―
―
―
―
―
Min Typ. Max Unit
―
― −
100
nA
―
― −
500
−
0.82
― −
1.52
−
0.38
― −
0.71
−
0.17
―
−
0.082
―
−
0.33
mA
−
0.15
−
0.078
― −
0.145
−
0.074
― −
0.138
30
―
―
50
―
―
70
―
―
―
80
―
―
80
―
―
80
―
―
― −
0.1
−
0.3
V
−
1.1
― −
2.0
−
1.2
― −
2.4
−
1.3
― −
3.0
V
−
1.5
― −
5.0
−
0.6
― −
1.1
−
0.7
― −
1.3
−
1.0
― −
1.5
V
−
0.5
― −
0.8
―
200
―
MHz
―
3
6
pF
3.29 4.7 6.11
7
10
13
15.4 22 28.6
k
Ω
32.9 47 61.1
1.54 2.2 2.86
3.29 4.7 6.11
0.9 1.0 1.1
0.0421 0.0468 0.0515
―
0.09 0.1 0.11
2
2014-03-01
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