MMBT5401 데이터 시트보기 (PDF) - ZOWIE Technology

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MMBT5401

High Voltage Transistor

ZOWIE Technology 

Zowie Technology Corporation

High Voltage Transistor

PNP Silicon

3

MMBT5401

1

2

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

SOT-23

Symbol

VCEO

VCBO

VEBO

IC

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR-5 Board(1) TA=25oC

Derate above 25oC

Thermal Resistance Junction to Ambient

Total Device Dissipation Alumina Substrate,(2) TA=25oC

Derate above 25oC

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

Symbol

PD

R JA

PD

R JA

TJ,TSTG

DEVICE MARKING

MMBT5401=2L

ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Collector-Emitter Breakdowe Voltage

( IC = 1.0mAdc, IB = 0 )

V(BR)CEO

COLLECTOR

3

BASE

1

2

EMITTER

Value

-150

-160

-5.0

-500

Unit

Vdc

Vdc

Vdc

mAdc

Max.

225

1.8

556

300

2.4

417

-55 to +150

Unit

mW

mW / oC

oC / W

mW

mW / oC

oC / W

oC

Min.

Max.

Unit

-150

-

Vdc

Collector-Base Breakdowe Voltage

( IC = -100 uAdc, IE = 0 )

V(BR)CBO

-160

-

Vdc

Emitter-Base Breakdowe Voltage

( IE = -10 uAdc, IC = 0 )

Collector Cutoff Current

( VCE= -120 Vdc, IE = 0 )

( VCE= -120 Vdc, IE = 0, TA = 100 oC )

(1) FR-5=1.0 x 0.75 x 0.062in.

(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.

REV. : 0

V(BR)EBO

-5.0

ICES

-

-

-

Vdc

-50

nAdc

-50

uAdc

Zowie Technology Corporation

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