10BQ030TRPBF 데이터 시트보기 (PDF) - Vishay Semiconductors

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10BQ030TRPBF

Schottky Rectifier, 1.0 A

Vishay Semiconductors 

10BQ030PbF

Vishay High Power Products Schottky Rectifier, 1.0 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

VFM (1)

Maximum reverse leakage current

IRM (1)

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

CT

LS

dV/dt

TEST CONDITIONS

1A

TJ = 25 °C

2A

1A

TJ = 125 °C

2A

TJ = 25 °C

TJ = 100 °C

VR = Rated VR

TJ = 125 °C

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated VR

VALUES

0.420

0.470

0.300

0.370

0.5

5.0

15

200

2.0

10 000

UNITS

V

mA

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and

storage temperature range

Maximum thermal resistance,

junction to lead

TJ (1), TStg

RthJL (2)

DC operation

Maximum thermal resistance,

junction to ambient

RthJA

Approximate weight

Marking device

Case style SMB (similar DO-214AA)

Notes

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

(2) Mounted 1" square PCB

VALUES

- 55 to 150

UNITS

°C

25

°C/W

80

0.10

g

0.003

oz.

V1E

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 94111

Revision: 16-Apr-08

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