INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD5072
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 0.8A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 0.8A
ICBO
Collector Cutoff Current
VCB= 800V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 5A
fT
Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V
tf
Fall Time
IC= 4A , IB1= 0.8A ; IB2= -1.6A
RL= 50Ω;VCC= 200V
5.0
V
1.5
V
10
μA
40
200 mA
8
2.0
V
3
MHz
0.4 μs
isc Website:www.iscsemi.cn
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