5962F9563501QXC 데이터 시트보기 (PDF) - Intersil

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5962F9563501QXC

Radiation Hardened Real Time Express™ Microcontroller

Intersil 

Die Characteristics

DIE DIMENSIONS:

364 mils x 371 mils x 21 mils ±1mil

INTERFACE MATERIALS:

Glassivation:

Type: SiO2

Thickness: 8kÅ ±1kÅ

Top Metallization:

Type: Al/Si/Cu

Thickness: 7.5kÅ ±2kÅ

Metallization Mask Layout

HS-RTX2010RH

Substrate:

TSOS5 CMOS,

Silicon on Sapphire

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (SOS)

ADDITIONAL INFORMATION:

Worst Case Current Density:

1.0 x 105 A/cm2

HS-RTX2010RH

RESET (12)

WAIT (13)

ICLK (14)

GR/W (15)

GIO (16)

GD15 (17)

GD14 (18)

GD13 (19)

GND (20)

GD12 (21)

GD11 (22)

GD10 (23)

GD09 (24)

GD08 (25)

GD07 (26)

VCC (27)

GD06 (28)

GD05 (29)

GD04 (30)

GD03 (31)

GND (32)

(74) MD08

(73) VCC

(72) MD07

(71) MD06

(70) MD05

(69) GND

(68) MD04

(67) MD03

(66) MD02

(65) MD01

(64) MD00

(63) MR/W

(62) PCLK

(61) BOOT

(60) NEW

(59) UDS

(58) LDS

(57) GND

(56) MA19

(55) MA18

(54) MA17

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-

out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

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