AO4566 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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AO4566 Datasheet PDF : 5 Pages
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AO4566
30V N-Channel MOSFET
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(ON) at 4.5V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
30V
12A
< 11mΩ
< 17mΩ
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
Bottom View
D
D
D
D
D
G
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
CurrentG
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
VDS Spike
Power Dissipation B
100ns
TA=25°C
TA=70°C
VDS
VGS
ID
IDM
IAS
EAS
VSPIKE
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
30
±20
12
9.4
48
15
11
36
2.5
1.6
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
42
70
Maximum Junction-to-Lead
Steady-State
RθJL
20
Max
50
85
30
Units
V
V
A
A
mJ
V
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Aug 2012
www.aosmd.com
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