GS840E18B-100 데이터 시트보기 (PDF) - Giga Semiconductor

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GS840E18B-100

256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs

Giga Semiconductor 

Flow Through Read Cycle Timing

GS840E18/32/36T/B-180/166/150/100

CK

ADSP

ADSC

ADV

A0-An

GW

BW

Single Read

tS tH

tKH

Burst Read

tKL

tKC ADSP is blocked by E1 inactive

tS tH

ADSC initiated read

tS tH

Suspend Burst

Suspend Burst

tS tH

RD1

tS

RD2

RD3

tH

tS

tH

BA - BD

E1

E2

E3

G

DQA-DQD

tS tH

E1 masks ADSP

tS tH

tS tH

E2 and E3 only sampled with ADSP or ADSC

tOE tOHZ

tOLZ

tKQX

Q1a

Q2a Q2b

Q2c

Q2d

Hi-Z

tLZ

tKQ

Deselected with E2

tKQX

Q3a

tHZ

Rev: 2.05 6/2000

21/31

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com

© 1999, Giga Semiconductor, Inc.

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