BD9104FVM 데이터 시트보기 (PDF) - ROHM Semiconductor
부품명
상세내역
제조사
BD9104FVM
ROHM Semiconductor
BD9104FVM Datasheet PDF : 29 Pages
| |||
BD9102FVM BD9104FVM BD9106FVM
Datasheet
●Absolute Maximum Ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
VCC voltage
VCC
-0.3 to +7 *1
V
PVCC voltage
PVCC
-0.3 to +7 *1
V
EN voltage
EN
-0.3 to +7
V
SW,ITH voltage
SW,ITH
-0.3 to +7
V
Power dissipation 1
Pd1
387.5*2
mW
Power dissipation 2
Pd2
587.4*3
mW
Operating temperature range
Topr
-25 to +85
℃
Storage temperature range
Tstg
-55 to +150
℃
Maximum junction temperature Tjmax
+150
℃
*1 Pd should not be exceeded.
*2 Derating in done 3.1mW/℃ for temperatures above Ta=25℃.
*3 Derating in done 4.7mW/℃ for temperatures above Ta=25℃,Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB
●Operating Ratings(Ta=25℃)
Parameter
VCC voltage
PVCC voltage
EN voltage
SW average output current
*4 Pd should not be exceeded.
Symbol
VCC
PVCC*4
EN
Isw*4
BD9102FVM
Min.
Max.
4.0
5.5
4.0
5.5
0
VCC
-
0.8
BD9104FVM
Min.
Max.
4.5
5.5
4.5
5.5
0
VCC
-
0.8
BD9106FVM
Unit
Min.
Max.
4.0
5.5
V
4.0
5.5
V
0
VCC
V
-
0.8
A
●Electrical Characteristics
◎BD9102FVM(Ta=25℃,VCC=5V,EN=VCC unless otherwise specified.)
Parameter
Symbol
Min.
Typ.
Standby current
ISTB
-
0
Bias current
ICC
-
250
EN Low voltage
VENL
-
GND
EN High voltage
VENH
2.0
VCC
EN input current
IEN
-
1
Oscillation frequency
Pch FET ON resistance *5
Nch FET ON resistance *5
FOSC
RONP
RONN
0.8
1
-
0.35
-
0.25
Output voltage
VOUT
1.215
1.24
ITH SInk current
ITHSI
10
20
ITH Source Current
ITHSO
10
20
UVLO threshold voltage
VUVLOTh
2.6
2.7
UVLO hysteresis voltage
VUVLOHys
50
100
Soft start time
TSS
0.5
1
Timer latch time
TLATCH
0.5
1
*5 Design Guarantee（Outgoing inspection is not done on all products）
Max.
10
400
0.8
-
10
1.2
0.60
0.50
1.265
-
-
2.8
200
2
2
Unit
μA
μA
V
V
μA
MHz
Ω
Ω
V
μA
μA
V
mV
ms
ms
Conditions
EN=GND
Standby mode
Active mode
VEN=5V
PVCC=5V
PVCC=5V
VOUT=H
VOUT=L
VCC=H→L
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
4/27
TSZ02201-0J3J0AJ00080-1-2
02.MAR.2012 Rev.001
Share Link: