BYV410-600 데이터 시트보기 (PDF) - NXP Semiconductors.

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BYV410-600

Enhanced ultrafast dual rectifier diode

NXP Semiconductors. 

NXP Semiconductors

2. Pinning information

Table 2. Pinning information

Pin

Symbol Description

1

A1

anode 1

2

K

cathode

3

A2

anode 2

mb

K

mounting base; cathode

BYV410-600

Enhanced ultrafast dual rectifier diode

Simplified outline

mb

Graphic symbol

A1

A2

K

sym125

3. Ordering information

123

SOT78

(TO-220AB)

Table 3. Ordering information

Type number

Package

Name

Description

Version

BYV410-600

TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78

TO-220AB

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VRRM

repetitive peak reverse

voltage

VRWM

crest working reverse

voltage

VR

IO(AV)

reverse voltage

DC

average output current square-wave pulse; δ = 0.5; Tmb ≤ 92 °C; both diodes

conducting; see Figure 1; see Figure 2

IFRM

repetitive peak forward δ = 0.5; tp = 25 µs; Tmb ≤ 108 °C; per diode

current

IFSM

non-repetitive peak

tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per diode

forward current

tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode

Tstg

storage temperature

Tj

junction temperature

Min Max Unit

-

600 V

-

600 V

-

600 V

-

20

A

-

20

A

-

132 A

-

120 A

-40 150 °C

-

150 °C

BYV410-600_1

Product data sheet

Rev. 01 — 29 June 2009

© NXP B.V. 2009. All rights reserved.

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