BYV410-600 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
제조사
BYV410-600 Datasheet PDF : 10 Pages
| |||
NXP Semiconductors
BYV410-600
Enhanced ultrafast dual rectifier diode
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
VF
forward voltage
IR
reverse current
Dynamic characteristics
Qr
recovered charge
trr
reverse recovery time
IRM
peak reverse recovery
current
VFR
forward recovery
voltage
Conditions
IF = 10 A; Tj = 150 °C
IF = 10 A; Tj = 25 °C; see Figure 4
VR = 600 V
VR = 600 V; Tj = 100 °C
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; see Figure 5
IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
see Figure 5
IF = 1 A; dIF/dt = 100 A/µs; see Figure 6
Min Typ Max Unit
-
1.3 1.9 V
-
1.4 2.1 V
-
13
50
µA
-
1
1.5 mA
-
15
28
C
-
20
35
ns
-
1.4 1.9 A
-
3.2 -
V
12
IF
(A)
8
4
003aad261
(1)
(2)
(3)
0
0
1
2
3
VF (V)
IF
dlF
dt
trr
time
25 %
Qr
100 %
IR
IRM
003aac562
Fig 5. Reverse recovery definitions; ramp recovery
Fig 4. Forward current as a function of forward
voltage
BYV410-600_1
Product data sheet
Rev. 01 — 29 June 2009
© NXP B.V. 2009. All rights reserved.
5 of 10
Share Link: 