FDC2512 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDC2512 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 1.4A
8
6
VDS = 50V
75V
100V
4
2
0
0
1
2
3
4
5
6
7
8
9
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
0.1
100µs
1ms
10ms
100ms
1s
DC
0.01
0.001
0.1
VGS = 10V
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
500
400
CISS
300
f = 1MHz
VGS = 0 V
200
100
COSS
CRSS
0
0
25
50
75
100
125
150
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 156°C/W
30
TA = 25°C
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.01
0.0001
0.02
0.01
0.001
SINGLE PULSE
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 156°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDC2512 Rev B3(W)
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