KM44H32041CB-G0 데이터 시트보기 (PDF) - Samsung

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KM44H32041CB-G0

DDR SDRAM Specification Version 0.61

Samsung 

128Mb DDR SDRAM

Target

3.2.3 Precharge

The precharge command is used to precharge or close a bank that has been activated. The precharge com-

mand is issued when CS, RAS and WE are low and CAS is high at the rising edge of the clock. The precharge

command can be used to precharge each bank respectively or all banks simultaneously. The bank select

addresses(BA0, BA1) are used to define which bank is precharged when the command is initiated. For write

cycle, tWR(min.) must be satisfied until the precharge command can be issued. After tRP from the precharge,

an active command to the same bank can be initiated.

Bank Selection for Precharge by Bank address bits

A10/AP

BA1

BA0

Precharge

0

0

0

Bank A Only

0

0

1

Bank B Only

0

1

0

Bank C Only

0

1

1

Bank D Only

1

X

X

All Banks

Table 5. Bank selection for precharge by Bank address bits

3.2.4 No Operation(NOP) & Device Deselect

The device should be deselected by deactivating the CS signal. In this mode DDR SDRAM should ignore

all the control inputs. The DDR SDRAMs are put in NOP mode when CS is active and by deactivating RAS,

CAS and WE. For both Deselect and NOP the device should finish the current operation when this com-

mand is issued.

- 18 of 63 -

REV. 0.61 August 9. '99

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