DT28F016SA-150 데이터 시트보기 (PDF) - Intel

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DT28F016SA-150

16-MBIT (1 MBIT X 16, 2 MBIT X 8) FlashFile™ MEMORY

Intel 

E

28F016SA

5.5 DC Characteristics: COMMERCIAL AND EXTENDED TEMPERATURE

VCC = 5.0V ± 10%, 5.0V ± 5%, TA = 0°C to +70°C, –40°C to +85°C

3/5# Pin Set Low for 5V Operations

Temp Comm Extended

Sym

Parameter

Notes Typ Max Typ Max Units

Test Conditions

IIL

Input Load Current

1

ILO

Output Leakage

1

Current

ICCS VCC Standby Current 1,5,6

ICCD

VCC Deep Power-

Down Current

ICCR1 VCC Read Current

1

1,4,5

ICCR2 VCC Read Current

1,4,5

ICCW VCC Program Current

1

for Word or Byte

ICCE

VCC Block Erase

Current

1

ICCES

VCC Erase Suspend

Current

1,2

±1

± 10

±1

µA VCC = VCC Max

VIN = VCC or GND

± 10 µA VCC = VCC Max

VIN = VCC or GND

50 100 70 250 µA VCC = VCC Max

CE0#, CE1#, RP# = VCC ±

0.2V

BYTE#, WP#, 3/5# = VCC

± 0.2V or GND ± 0.2V

2

4

2

10

mA VCC = VCC Max

CE0#, CE1#, RP# = VIH

BYTE#, WP#, 3/5# = VIH

or VIL

1

5 10 60 µA RP# = GND ± 0.2V

BYTE# = GND ± 0.2V or

VCC ± 0.2V

50 60 55 70 mA VCC = VCC Max

CMOS: CE0#, CE1# =

GND ±

0.2V, BYTE# = GND ±

0.2V or VCC ± 0.2V,

Inputs = GND ± 0.2V or

VCC ± 0.2V

TTL: CE0#, CE1# = VIL,

BYTE# = VIL or VIH,

Inputs = VIL or VIH

f = 10 MHz, IOUT = 0 mA

30 35 30 35 mA VCC = VCC Max

CMOS: CE0#, CE1# =

GND ± 0.2V, BYTE# =

GND ± 0.2V or VCC ±

0.2V, Inputs = GND ±

0.2V or VCC ± 0.2V

TTL: CE0#, CE1# = VIL,

BYTE# = VIL or VIH,

Inputs = VIL or VIH

f = 5 MHz, IOUT = 0 mA

25 35 25 35 mA Program in Progress

18 25 18 25 mA Block Erase in Progress

5

10

5

10

mA CE0#, CE1# = VIH

Block Erase Suspended

29

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