28F320S3-130 데이터 시트보기 (PDF) - Intel

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28F320S3-130

WORD-WIDE FlashFile™ MEMORY FAMILY

Intel 

E

28F160S3, 28F320S3

4.2.6

DEVICE GEOMETRY DEFINITION

This field provides critical details of the flash device

geometry.

Offset

27h

Length

(bytes)

01h

Table 10. Device Geometry Definition

Description

Device Size = 2N in Number of Bytes

28h

02h

Flash Device Interface Description

value

meaning

0002h

x8/x16 asynchronous

2Ah

02h

Maximum Number of Bytes in Write Buffer = 2N

2Ch

01h

Number of Erase Block Regions within Device:

bits 7–0 = x = # of Erase Block Regions

2Dh

04h

Erase Block Region Information

bits 15–0 = y, Where y+1 = Number of Erase Blocks of

Identical Size within Region

bits 31–16 = z, Where the Erase Block(s) within This Region

are (z) × 256 Bytes

28F320S3/

28F160S3

27:

0015h

(16Mb)

27:

0016h

(32Mb)

28:

0002h

29:

0000h

2A:

0005h

2B:

0000h

2C: 0001h

y:

32 Blk

(16Mb)

2D: 001Fh

2E:

0000h

y:

64 Blk

(32Mb)

2D: 003Fh

2E: 0000h

z:

64-KB

2F:

0000h

30:

0001h

ADVANCE INFORMATION

23

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