28F800F3F3B120 데이터 시트보기 (PDF) - Intel

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28F800F3F3B120

FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT

Intel 

E

FAST BOOT BLOCK DATASHEET

8.11 DC Characteristics(1) —Automotive Temperature

Sym

Parameter

Note Typ Max Unit

Test Condition

ICCS VCC Standby Current

ICCR VCC Read Current

2,6 40 60 µA VCC = VCC Max

VCCQ = VCCQ Max

CE# = RST# = VIH

4,6 60 75 mA Asynchronous VCC = VCC Max

tAVAV = Min

VCCQ = VCCQ Max

VIN = VIH or VIL

60 75 mA Synchronous CE# = VIL

CLK = 22 MHz OE# = VIH

Burst length = 1

ICCW VCC Program Current

3,5,7 8

20 mA VPP = VPPH1 (3.0 V–3.6 V)

Program in progress

8 20 mA VPP = VPPH2 (11.4 V–12.6 V)

Program in progress

ICCE VCC Block Erase

Current

3,5,7 8

20 mA VPP = VPPH1 (3.0 V–3.6 V)

Block erase in progress

8 20 mA VPP = VPPH2 (11.4 V–12.6 V)

Block erase in progress

IPPW VPP Program Current

3,5,7 15

40 mA VPP = VPPH1 (3.0 V–3.6 V)

Program in progress

10 25 mA VPP = VPPH2 (11.4 V–12.6 V)

Program in progress

IPPE VPP Block Erase

Current

3,5,7 13

25 mA VPP = VPPH1 (3.0 V–3.6 V)

Block erase in progress

8 25 mA VPP = VPPH2 (11.4 V–12.6 V)

Block erase in progress

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at normal VCC, T = +25 °C.

2. Erases and program operations are inhibited when VPP ≤ VPPLK, and not guaranteed outside the valid VPP ranges of VPPH1

and VPPH2.

3. Sampled, not 100% tested.

4. Automatic Power Savings (APS) reduces ICCR to approximately standby levels, in static operation.

5. 12 V (11.4 V–12.6 V) can only be applied to VPP for a maximum of 80 hours over the lifetime of the device. VPP should not

be permanently tied to 12 V.

6. The specification is the sum of VCC and VCCQ currents.

PRODUCT PREVIEW

43

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