TTB28F400B5-T80 데이터 시트보기 (PDF) - Intel

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TTB28F400B5-T80

SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT

Intel 

SMART 5 BOOT BLOCK MEMORY FAMILY

E

VIH

ADDRESSES (A)

VIL

CE# (E) VIH

VIL

OE# (G)VIH

VIL

WE# (WV) IH

VIL

VOH

DATA (D/Q)

VOL

High Z

RP#(P) VIH

VIL

Device and

Address Selection

Address Stable

Data

Valid

R1

R7 R4

R6

R3

Valid Output

R2

R5

Standby

R8

R9

R10

High Z

Figure 15. AC Waveforms for Read Operations

0599-14

5.6 Erase and Program Timings—Commercial and Extended Temperature

VCC = 5 V ± 10%

Temp

Commercial

Extended

VPP

Parameter

5 V ± 10% 12 V ± 5% 5 V ± 10% 12 V ± 5%

Typ Max Typ Max Typ Max Typ Max Units

Boot/Parameter Block Erase Time

7

7

7

7

s

Main Block Erase Time

14

14

14

14

s

Main Block Write Time (Byte Mode)

s

Main Block Write Time (Word Mode)

s

Byte Program Time

100

100

100

100 µs

Word Program Time

100

100

100

100 µs

NOTES:

1. All numbers are sampled, not 100% tested.

2. Max erase times are specified under worst case conditions. The max erase times are tested at the same value

independent of VCC and VPP. See Note 3 for typical conditions.

3. Typical conditions are 25 °C with VCC and VPP at the center of the specified voltage range. Production programming using

VCC = 5.0 V, VPP = 12.0 V typically results in a 60% reduction in programming time.

4. Contact your Intel representative for information regarding maximum byte/word write specifications.

5. Max program times are guaranteed for the two parameter blocks and 96-KB main block only.

32

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