FQD30N06(2013) 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FQD30N06 Datasheet PDF : 8 Pages
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Top: 15.V0GVS
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
101
100
10-1
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
100
80
60
VGS = 10V
VGS = 20V
40
20
※ Note : TJ = 25℃
0
0
20
40
60
80
100
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1500
1000
Coss
Ciss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
※ Notes :
1.
2.
fV=GS1=M0HVz
500
Crss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
150℃
25℃
-55℃
※ Notes :
1.
2.
2V5DS0μ=s25PVulse
Test
100
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
0.4
150℃
25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
10
VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 30A
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
3
FQD30N06 Rev. C1
www.fairchildsemi.com
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