GT40Q321 데이터 시트보기 (PDF) - Toshiba
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GT40Q321 Datasheet PDF : 6 Pages
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GT40Q321
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Diode forward voltage
Reverse recovery time
IGES
VGE = ±25 V, VCE = 0
―
― ±500 nA
ICES
VCE = 1200 V, VGE = 0
―
―
5.0 mA
VGE (OFF) IC = 40 mA, VCE = 5 V
4.0
―
7.0
V
VCE (sat) IC = 40 A, VGE = 15 V
―
2.8
3.6
V
Cies
VCE = 10 V, VGE = 0, f = 1 MHz
― 3200 ―
pF
tr
Resistive Load
― 0.19 ―
ton
VCC = 600 V, IC = 40 A
tf
VGG = ±15 V, RG = 39 Ω
― 0.25 ―
μs
― 0.41 0.72
toff
(Note 1) ― 0.57 ―
VF
IF = 10 A, VGE = 0
―
―
2.0
V
trr
IF = 10 A, di/dt = −20 A/μs
―
0.6
―
µs
Note 1: Switching time measurement circuit and input/output waveforms
VGE
90%
0
RG
RL
0
IC
VCC
90%
10%
90%
0 VCE
10%
td (off)
tf
toff
10%
tr
ton
General Safety Precautions and Usage Considerations
• The GT40Q321 is only intended for single-transistor voltage resonant circuits in induction heating (IH)
equipment. For other applications, please contact your nearest Toshiba sales office.
• Do not use devices under conditions in which their maximum ratings will be exceeded. A device may break
down or its performance may be degraded, causing thermal runaway or explosion resulting in injury to the user.
It is therefore necessary to incorporate device derating into circuit design.
• In all IGBT devices, maximum collector-emitter voltage (VCES) decreases when the junction temperature
becomes low. It is therefore necessary to incorporate device derating into circuit design.
• Maximum collector current is calculated from Tj MAX.(150°C), the thermal resistance and DC forward power
dissipation. However it’s limited in real application by another factor such as switching loss, limitation of the
inner bonding wires and so on.
2
2006-11-01
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