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GT40Q321 데이터 시트보기 (PDF) - Toshiba
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GT40Q321
Silicon N Channel IEGT Injection Enhanced Gate Transistor
Toshiba
GT40Q321 Datasheet PDF : 6 Pages
1
2
3
4
5
6
80
Common emitter
Tc
=
25°C
I
C
– V
CE
20
15
12
60
10
40
VGE
=
8 V
20
0
0
1
2
3
4
5
Collector-emitter voltage VCE (V)
GT40Q321
V
CE
– V
GE
10
Common emitter
Tc
= −
40°C
8
6
80
4
40
20
2
IC
=
10 A
0
0
5
10
15
20
25
Gate-emitter voltage VGE (V)
V
CE
– V
GE
10
Common emitter
Tc
=
25°C
8
6
80
4
40
20
2
IC
=
10 A
0
0
5
10
15
20
25
Gate-emitter voltage VGE (V)
V
CE
– V
GE
10
Common emitter
Tc
=
125°C
8
6
80
4
40
20
IC
=
10 A
2
0
0
5
10
15
20
25
Gate-emitter voltage VGE (V)
80
Common emitter
VCE
=
5 V
I
C
– V
GE
60
40
20
25
Tc
=
125°C
−
40
0
0
4
8
12
16
Gate-emitter voltage VGE (V)
V
CE (sat)
– Tc
6
Common emitter
VGE
=
15 V
5
4
3
2
1
80
40
20
IC
=
10 A
0
−
60
−
20
20
60
100
140
Case temperature Tc (°C)
3
2006-11-01
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