GT40Q321 데이터 시트보기 (PDF) - Toshiba
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GT40Q321 Datasheet PDF : 6 Pages
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VCE, VGE – QG
400
20
Common emitter
RL = 7.5 Ω
Tc = 25°C
300
15
200
VCE = 300 V
10
100 V
200 V
100
5
0
0
0
50
100
150
200
Gate charge QG (nC)
GT40Q321
50000
30000
C – VCE
10000
5000
3000
Cies
1000
500
300
100
Common emitter
50 VGE = 0
30 f = 1 MHz
Tc = 25°C
10
0.1 0.3
1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
Switching time – IC
10
Common emitter
5 VCC = 600 V
3 RG = 39 Ω
VGG = ±15 V
Tc = 25°C
1
0.5
toff
0.3
tf
0.1
ton
tr
0.05
0.03
0.01
0
10
20
30
40
50
Collector current IC (A)
Switching time – RG
5
Common emitter
3 VCC = 600 V
IC = 40 A
VGG = ±15 V
Tc = 25°C
1
0.5
toff
0.3
tf
ton
0.1
tr
0.05
0.03
0.01
1
3
10
30
100
300
Gate resistance RG (Ω)
1000
5000
3000
1000
500
300
Safe operating area
*Single non-repetitive pulse
Tc = 25°C
Curves must be derated
linearly with increases in
temperature.
100 IC max (pulsed)*
50
30 IC max
(continuous)
10
1 ms*
100 μs*
10 ms*
5
DC
3
operation
10 μs*
1
1
3
10 30 100 300 1000 3000 10000
Collector-emitter voltage VCE (V)
5000
3000
1000
500
300
100
50
30
10
5
3
1
1
Reverse bias SOA
Tj ≤ 125°C
VGG = 20 V
RG = 10 Ω
3
10 30 100 300 1000 3000 10000
Collector-emitter voltage VCE (V)
4
2006-11-01
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