IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
DC ELECTRICAL CHARACTERISTICS
VCC = 5.0V ± 10%
Symbol
|ILI|
|ILO|
VOL
VOH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
VCC = Max.,
VIN = GND to VCC
VCC = Max., CS = VIH,
VOUT = GND to VCC
IOL = 8mA, VCC = Min.
IOH = –4mA, VCC = Min.
MIL
COM’L
MIL
COM’L
MILITARY AND COMMERCIAL TEMPERATURE RANGES
IDT6167SA
Min.
Max.
—
10
—
5
—
10
—
5
—
0.4
2.4
—
IDT6167LA
Min.
Max.
—
5
—
2
—
5
—
2
—
0.4
2.4
—
Unit
µA
µA
V
V
2981 tbl 08
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(LA Version Only) VLC = 0.2V, VHC = VCC – 0.2V
Typ. (1)
VCC @
Max.
VCC @
Symbol
Parameter
Test Condition
Min.
2.0v
3.0V
2.0V
3.0V
VDR
VCC for Data Retention
—
2.0
—
—
—
—
ICCDR
Data Retention Current
MIL.
—
0.5
1.0
200
300
COM’L. —
0.5
1.0
20
30
tCDR
Chip Deselect to Data
CS ≥ VHC
0
—
—
—
—
Retention Time
VIN ≥ VHC or ≤ VLC
tR(3)
Operation Recovery Time
tRC(2)
—
—
—
—
|ILI|(3)
Input Leakage Current
—
—
—
—
2
2
NOTES:
1. TA = +25°C.
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Unit
V
µA
ns
ns
µA
2981 tbl 09
LOW VCC DATA RETENTION WAVEFORM
DATA
RETENTION
MODE
VCC
4.5V
VDR ≥ 2V
tCDR
CS
VDR
VIH
4.5V
tR
VIH
2981 drw 03
5.2
4