IMC010FLSA-15 데이터 시트보기 (PDF) - Intel

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IMC010FLSA-15

SERIES 2 FLASH MEMORY CARDS

Intel 

SERIES 2 FLASH MEMORY CARDS

COMMON AND ATTRIBUTE MEMORY AC CHARACTERISTICS Write Operations(1)

Symbol

JEDEC

PCMCIA

Parameter

Notes Min Max Unit

tAVAV

tWC

Write Cycle Time

150

ns

tWLWH tw (WE)

Write Pulse Width

80

ns

tAVWL

tsu (A)

Address Setup Time

20

ns

tAVWH tsu (A-WEH) Address Setup Time for WE

100

ns

tVPWH

tvps

VPP Setup to WE Going High

100

ns

tELWH tsu (CE-WEH) Card Enable Setup Time for WE

100

ns

tDVWH tsu (D-WEH) Data Setup Time for WE

50

ns

tWHDX th (D)

Data Hold Time

20

ns

tWHAX trec (WE)

Write Recover Time

20

ns

tWHRL

WE High to RDY BSY

120 ns

tWHQV1

Duration of Data Write Operation

6

ms

tWHQV2

Duration of Block Erase Operation

03

sec

tQVVL

VPP Hold from Operation Complete

2

0

ns

tWHGL th (OE-WE)

Write Recovery before Read

10

ns

tRHWL

Reset-PwrDwn Recovery to WE Going Low

1

ms

NOTES

1 Read timing characteristics during erase and data write operations are the same as during read-only operations Refer to

AC Characteristics for Read-Only operations

2 Refer to text on Data-Write and Block-Erase Operations

BLOCK ERASE AND DATA WRITE PERFORMANCE

Parameter

Notes Min Typ(3) Max Unit

Block Pair Erase Time(1) 2 4

1 1 10 sec

Block Pair Write Time 2 4

0 5 2 1 sec

Byte Word Write Time

4 4 8 ms 6 ms 3 ms

NOTES

1 Individual blocks can be erased 100 000 times

2 Excludes System-Level Overhead

3 25 C 12 0 VPP

4 Monitor Ready Busy Registers for the completion of a write erase command

32

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