IS42RM16800E 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS42RM16800E

16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM

Integrated Silicon Solution 

IS42SM81600E / IS42SM16800E / IS42SM32400E

IS42RM81600E / IS42RM16800E / IS42RM32400E

DC RECOMMENDED OPERATING CONDITIONS

IS42SMxxx - 3.3V Operation

Symbol

Vdd

Vddq

Vih(1)

Vil(2)

Iil

Iol

Voh

Vol

Parameters

Supply Voltage

I/O Supply Voltage

Input High Voltage

Input Low Voltage

Input Leakage Current (0V ≤ Vin ≤ Vdd)

Output Leakage Current (Output disabled, 0V ≤ Vout ≤ Vdd)

Output High Voltage Current (Ioh = -2mA)

Output Low Voltage Current (Iol = 2mA)

Min. Typ.

Max.

Unit

3.0

3.3

3.6

V

3.0

3.3

3.6

V

2.0

–

Vddq+0.3

V

-0.3

–

0.8

V

-5

–

+5

µA

-5

–

+5

µA

2.4

–

–

V

–

–

0.4

V

IS42RMxxx - 2.5V Operation

Symbol

Vdd

Vddq

Vih(1)

Vil(2)

Iil

Iol

Voh

Vol

Parameters

Supply Voltage

I/O Supply Voltage

Input High Voltage

Input Low Voltage

Input Leakage Current (0V ≤ Vin ≤ Vdd)

Output Leakage Current (Output disabled, 0V ≤ Vout ≤ Vdd)

Output High Voltage Current (Ioh = -2mA)

Output Low Voltage Current (Iol = 2mA)

Notes:

1. Vih (overshoot): Vih (max) = Vddq +1.2V (pulse width < 3ns).

2. Vil (undershoot): Vih (min) = -1.2V (pulse width < 3ns).

3. All voltages are referenced to Vss.

Contact Product Marketing for 3.0V + 10% support.

Min. Typ. Max. Unit

2.3

2.5

2.7

V

2.3

2.5

2.7

V

2.0

-

Vdd+0.3

V

-0.3

-

0.55

V

-5

–

+5

µA

-5

–

+5

µA

Vdd-0.2

–

-

V

-

–

0.2

V

Integrated Silicon Solution, Inc. - www.issi.com

15

Rev.  B

04/15/2011

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